摘要 |
A method for producing an insulator film for use as an interlayer dielectric film in a semiconductor device having a multi-level interconnection structure is disclosed. An inert plasma producing gas, such as argon, is introduced into a vacuum vessel along with a thin film deposition gas, such as a compound gas containing fluorine and carbon. Activation of the plasma producing gas activates the thin film producing gas, resulting in a thin fluorine containing carbon insulator film on the semiconductor device. In order to thermally stabilize the insulator layer, the semiconductor device is annealed.
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