Method for producing SOI wafers by delamination

摘要

This invention provides a method for producing SOI wafers by delamination comprising the steps of preparing a first wafer (2) having an insulating layer (3) on its both major surfaces; providing two delamination planes (4; 4') in the interior of said first wafer (2); bonding a second wafer (1) on one side of the first wafer (2); bonding a third wafer (1') on the other side of the first wafer (2); and delaminating said second and third wafers (1; 1') from said first wafer (2) such that each of said second and third wafers (1; 1') carries a SOI layer (3, 7; 3', 7') on one of its major surfaces.