发明名称 |
Hardmask trim process |
摘要 |
An improved method of forming circuit structures having linewidths which are smaller than what is achievable by conventional UV lithographic techniques on ultra-thin resist layers is provided. The method includes a hardmask which is patterned using an ultra-thin resist layer and is then trimmed to reduce the width of the hardmask before etching the underlying gate conductive layer.
|
申请公布号 |
US6420097(B1) |
申请公布日期 |
2002.07.16 |
申请号 |
US20000562659 |
申请日期 |
2000.05.02 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PIKE CHRISTOPHER L.;BELL SCOTT A. |
分类号 |
H01L21/28;H01L21/3213;(IPC1-7):G03F7/36 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|