Ferroelectric memory transistor with high-k gate insulator and method of fabrication

摘要

A ferroelectric memory transistor comprising a thin high-dielectric constant gate insulator, such as titanium oxide (TiO2), coupled with an insulating film of a weak ferroelectric material, as well as a method for its formation are disclosed. The weak ferroelectric film may contain a zinc oxide material doped with lithium and/or magnesium.