| 摘要 |
A field-effect transistor and a method for its fabrication is described. The transistor includes a monocrystalline semiconductor channel region overlying and epitaxially continuous with a body region of a semiconductor substrate. First and second semiconductor source/drain regions laterally adjoin opposite sides of the channel region and are electrically isolated from the body region by an underlying first dielectric layer. The source/drain regions include both polycrystalline and monocrystalline semiconductor material. A conductive gate electrode is formed over a second dielectric layer overlying the channel region. The transistor is formed by patterning the first dielectric layer to selectively cover a portion of the substrate and leave an exposed portion of the substrate. An additional semiconductor layer is then formed under conditions such that the monocrystalline semiconductor channel region forms on the exposed portion of the substrate and the part monocrystalline, part polycrystalline source/drain regions form on the first dielectric layer.
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