发明名称 |
Methods of forming portions of transistor structures, methods of forming array peripheral circuitry, and structures comprising transistor gates |
摘要 |
The invention encompasses a method of forming a portion of a transistor structure. A substrate is provided, and a transistor gate is formed over the substrate. The transistor gate has a sidewall. A silicon oxide is deposited over a portion of the substrate proximate the transistor gate by high density plasma deposition. A spacer is formed over the silicon oxide and along the sidewall of the transistor gate. The invention also encompasses a method of oxidizing a portion of a conductive structure. Additionally, the invention encompasses transistor gate structures, as well as structures comprising memory array and peripheral circuitry.
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申请公布号 |
US6420250(B1) |
申请公布日期 |
2002.07.16 |
申请号 |
US20000518508 |
申请日期 |
2000.03.03 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
CHO CHIH-CHEN;LANE RICHARD H.;DENNISON CHARLES H. |
分类号 |
H01L21/28;H01L21/60;H01L21/768;H01L21/8234;H01L21/8242;(IPC1-7):H01L21/320;H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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