| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the increase of the lattice defect or the self-resistance of a source/drain, and increase the doping efficiency and a transistor characteristic by lowering the activation temperature. CONSTITUTION: A gate(22) interposing a gate insulation film(21) dividing a device active at a lower part is formed on the device active region of a n-type silicon substrate(20) defining the device active region and a device isolation region. The first ion buried layer is formed at the first depth by applying the first ion injection using the gate as an ion injection mask and indium ion as the first impurity to the device active region. The second ion buried layer is formed at the second depth deeper than the first depth by applying the second ion injection using the gate as the ion injection mask and boron ion as the second impurity to the device active region. The source/drain(230,240) is formed by activating the ions of the first and the second ion buried layer.
|
