发明名称 |
Three device DRAM cell with integrated capacitor and local interconnect |
摘要 |
A semiconductor integrated circuit memory cell, including at least three transistors and a capacitor to form a DRAM. The memory cell is fabricated on a semiconductor substrate including impurity regions, and using two semiconductor films, with dielectric films between the semiconductor films. The capacitor contains two electrodes. A substrate impurity region forms one of the electrodes; the other electrode is a semiconductor film which connects the gate of one device to an impurity region of another. The method for manufacturing the above-described integrated circuit, which may be used for the manufacture of similar circuits, is also disclosed.
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申请公布号 |
US6420746(B1) |
申请公布日期 |
2002.07.16 |
申请号 |
US19980182857 |
申请日期 |
1998.10.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BRACCHITTA JOHN A.;MANN RANDY W.;OPPOLD JEFFREY H. |
分类号 |
H01L21/02;H01L21/768;H01L27/108;(IPC1-7):H01L27/108;H01L29/76;H01L31/119;H01L29/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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