| 摘要 |
PROBLEM TO BE SOLVED: To obtain more effectively a group III nitride crystal, and a method of growing it. SOLUTION: In a reaction vessel 101, a mixed liquid 102 of Ga as group III metal and Na as flux is filled, a heating device 106 is provided so as to control the temperature suitable for crystal growth, and nitrogen gas is used as raw material of nitrogen. The nitrogen gas is fed from the outside of the reaction vessel 101 into space 103 of the vessel 101, at this time, a pressure regulator 105 regulates the nitrogen pressure is provided. The group III nitride crystal to be a substrate of group III nitride film growth is obtained by this crystal growing apparatus. As a results, the low cost, high quality group III nitride crystal, and a device using the same can be realized without using conventional complicated processes.
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