发明名称 Method for fabricating passivation layer
摘要 A method for fabricating a passivation layer and a liquid crystal display. For the fabrication method, a substrate is provided. An oxide layer, a first silicon nitride layer, a spin-on-glass (SOG) layer, and a second silicon nitride layer are sequentially formed over the substrate. The liquid crystal display has a controller, a dielectric layer, a metal layer, an oxide layer, a first silicon nitride layer, a spin-on-glass layer, and a second silicon nitride layer. The dielectric layer is positioned over the controller. A metal layer is positioned over the dielectric layer. An oxide layer is formed over the metal layer. A first silicon nitride layer is formed over the oxide layer. A spin-on-glass (SOG) layer is formed over the first silicon nitride layer. A second silicon nitride layer is formed over the SOG layer.
申请公布号 US6421108(B1) 申请公布日期 2002.07.16
申请号 US19990313516 申请日期 1999.05.17
申请人 UNITED MICROELECTRONICS CORP. 发明人 CHEN WEI-SHIAU;CHEN SHUENN-JENG;LIU TSAN-WEN
分类号 G02F1/1362;H01L21/768;(IPC1-7):G02F1/133;H01L21/00 主分类号 G02F1/1362
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