发明名称 |
Semiconductor integrated circuit device |
摘要 |
A gate electrode of a field-effect transistor used as a peripheral circuit is constituted by the same gate electrode structure as a double-level gate electrode structure of nonvolatile memory cells. A hole for connecting the two layers of the gate electrode of a first field-effect transistor used as peripheral circuit is provided at a location which two-dimensionally overlaps the active area within the plane of the gate electrode, and a hole for connecting the two layers of the gate electrode of a second field-effect transistor used as a peripheral circuit is provided at a location which two-dimensionally overlaps an isolation area within the plane of the gate electrode. The gate length of the first field-effect transistor is longer than the gate length of the second field-effect transistor, and the gate width of the first field-effect transistor is wider than the gate width of the second field-effect transistor.
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申请公布号 |
US6420754(B2) |
申请公布日期 |
2002.07.16 |
申请号 |
US20010791832 |
申请日期 |
2001.02.26 |
申请人 |
HITACHI, LTD. |
发明人 |
TAKAHASHI MASAHITO;AKAMATSU SHIRO;SATOH AKIHIKO;OWADA FUKUO;KATO MASATAKA |
分类号 |
H01L21/768;G11C7/18;G11C16/04;H01L21/8247;H01L27/10;H01L27/115;H01L29/423;(IPC1-7):H01L29/792 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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