MEMORY DEVICE HAVING AMORPHOUS SILICON QUANTUM DOTS AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A memory device having the amorphous silicon quantum dots and a manufacturing method thereof are provided to give the memory device having a large capacity and a long memory storing time, being non-volatile and fast, and being capable of reading/writing with a small voltage by using a quantum dot micro structure. CONSTITUTION: A charging film(20) is formed on a front surface of a substrate(10) and an electrode layer(30) is formed on a back surface of the substrate and the surface of the charging film. A plurality of amorphous silicon quantum dots(20a) is uniformly spread within the charging film. The amorphous silicon quantum dot has a sphere shape, a size of 1.0-20.0 nm and a density of 1.0X10¬19-1.0X10¬21 per a cubic centimeter. The charging film has a thickness of 3-100 nm and comprises a silicon oxide or silicon nitride. In order to carry out a memory function, an electron or a hole is restricted in the amorphous silicon quantum dot. Thus, the amorphous silicon quantum dot is surrounded by a barrier layer such as the silicon oxide or silicon nitride.