| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitrogen added silicon semiconductor substrate which is excellent in quality and sufficient in oxygen precipitation after epitaxy, OSF is never transferred to epitaxial layer even at the oxidizing heat treatment in the process, and to provide a method of manufacturing the same. SOLUTION: The method of manufacturing epitaxial wafer is characterized in that the silicon semiconductor substrate is deposited with silicon single crystal layer on the surface of silicon single crystal wafer cut from nitrogen containing silicon single crystal manufactured by Czochralski method, on the surface of the silicon single crystal wafer substrate, the nitrogen concentration of which is >=1×1014 atoms/cm3 to <=2×1016 atoms/cm3, and carbon concentration is >=1×1016 atoms/cm3 to <=1×1018 atoms/cm3, the silicon single crystal layer is deposited by the epitaxial method.
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