METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To manufacture a 3C-SiC single crystal reduced in generation of stacking fault with good reproducibility. SOLUTION: The method of manufacturing the SiC single crystal is as follows: after forming a plurality of line and space ups and downs on the Si substrate, performing epitaxial growth of a 1st 3C-SiC layer 21 on the surface of Si substrate 11; after removing Si substrate 11 from the 1st 3C-SiC layer 21, performing epitaxial growth of a 2nd 3C-SiC layer 22 on the exposed surface having ups and downs of the 1st 3C-SiC layer 21; flattening the surface.