发明名称 |
method of forming lattice matched layer over a surface of a silicon substrate |
摘要 |
A method of forming lattice matched single crystal wide bandgap II-VI compound semiconductor films over a silicon substrate includes first cleaning (10) the silicon substrate. A passivation layer is formed (18), which may comprise arsenic, germanium, or CaF2, among others. The lattice matched layer is then grown (26) on the passivation layer.
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申请公布号 |
US6419742(B1) |
申请公布日期 |
2002.07.16 |
申请号 |
US19940340097 |
申请日期 |
1994.11.15 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED;TEXAS A&M UNIVERSITY SYSTEM |
发明人 |
KIRK WILEY P.;ZHOU JOE X.;GNADE BRUCE E.;CHO CHIH-CHEN |
分类号 |
C30B23/02;(IPC1-7):C30B25/14 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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