发明名称 Structuring device for processing a substrate
摘要 A structuring device (SD) for processing a surface of a substrate (SB), comprising a substrate chamber (VC) for mounting the substrate (SB) and a reaction chamber (GC) enabling a gas reaction at a given operating pressure. The reaction chamber (GC) has at least one gas inlet (GL) for a reaction gas and at least one injection outlet (JL) leading into the substrate chamber, while the substrate chamber (VC) is provided with a pumping system (PP) for maintaining a vacuum within the substrate chamber at a pressure not above the operating pressure of the gas reaction in the reaction chamber (GC). The injection outlet (JL) is provided with at least one injection pipe ending into an injection opening of given width, the injection pipe having a length not smaller than the width of the injection opening, the injection pipe forming the gas particles originating from the gas reaction into a gas jet streaming out of the injection opening. For controlling the distance between the injection opening and the substrate surface (SB) at a height of the order of or below the width of the opening as measured along the axis of the injection pipe, the injection outlet and/or the substrate are provided with a positioning means (NP,SP).
申请公布号 US6419752(B1) 申请公布日期 2002.07.16
申请号 US19990399303 申请日期 1999.09.17
申请人 THE PROVOST, FELLOWS AND SCHOLARS OF THE COLLEGE OF THE HOLY AND UNDIVIDED TRINITY OF QUEEN ELIZABETH NEAR DUBLIN;UNIVERSITATE GESAMTHOCHSHULE KASSEL;IMS-IONEN MIKROFABRIKATIONS SYSTEME GMBH 发明人 SHVETS IGOR V.;RANGELOW IVAJLO W.;GUETHNER PETER;VOIGHT JENS;MARIOTTO GUIDO;LOESCHNER HANS
分类号 H01L21/302;B81C1/00;C23C16/04;C23C16/513;C23F4/00;H01J37/32;H01L21/3065;H05H1/24;(IPC1-7):C23C16/00 主分类号 H01L21/302
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