| 发明名称 |
GaAs semiconductor device having a capacitor |
| 摘要 |
A semiconductor device includes a capacitor having a pair of electrodes opposite to each other through a dielectric layer, and an element other than the capacitor, both of which are formed on a semiconductor substrate. An ohmic electrode of the element and one of the electrodes of the capacitor are formed of the same metallic material.
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| 申请公布号 |
US6420739(B1) |
申请公布日期 |
2002.07.16 |
| 申请号 |
US19990302141 |
申请日期 |
1999.04.29 |
| 申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
YOKOI YASUSHI |
| 分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L27/06;H01L27/095;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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