| 摘要 |
An electric charge detector includes an N-type semiconductor substrate 10 and a P-type well region 9 formed on the semiconductor substrate 10. An N-type well region 2 is formed on the P-type well region 9. A potential-change detection means is connected to the N-type well region 2 to detect a variation in surface potential of the N-type well region 2. The P-type diffused layer 11 is formed on a surface of the N-type well region 2.
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