发明名称 |
Alignment mark design |
摘要 |
An alignment mark design has a metal plateau and a metal material formed over a substrate. The metal plateau is within a first dielectric layer. Openings within a second dielectric layer above the first dielectric layer are filled with a metal material. The metal material and the second dielectric layer alternate so that a part of the exposure light passing through the second dielectric layer between sections of the metal material can be reflected into an alignment system by the metal plateau.
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申请公布号 |
US6420791(B1) |
申请公布日期 |
2002.07.16 |
申请号 |
US19990448083 |
申请日期 |
1999.11.23 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HUANG CHIEN-CHAO;CHEN ANSEIME;WANG SHIH-CHE |
分类号 |
H01L23/544;(IPC1-7):H01L23/544 |
主分类号 |
H01L23/544 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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