发明名称 Alignment mark design
摘要 An alignment mark design has a metal plateau and a metal material formed over a substrate. The metal plateau is within a first dielectric layer. Openings within a second dielectric layer above the first dielectric layer are filled with a metal material. The metal material and the second dielectric layer alternate so that a part of the exposure light passing through the second dielectric layer between sections of the metal material can be reflected into an alignment system by the metal plateau.
申请公布号 US6420791(B1) 申请公布日期 2002.07.16
申请号 US19990448083 申请日期 1999.11.23
申请人 UNITED MICROELECTRONICS CORP. 发明人 HUANG CHIEN-CHAO;CHEN ANSEIME;WANG SHIH-CHE
分类号 H01L23/544;(IPC1-7):H01L23/544 主分类号 H01L23/544
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