发明名称 |
Method of forming an alternative ground contact for a semiconductor die |
摘要 |
In a semiconductor device, a method forms an alternative ground contact for a semiconductor die in which bulk silicon at the back of a die may be electrically grounded to an area containing functional devices and/or to packaging substrate by conductive fillet material surrounding the die and in contact with the bulk silicon and with a guard ring surrounding the area containing functional devices and/or the packaging substrate. |
申请公布号 |
US6420208(B1) |
申请公布日期 |
2002.07.16 |
申请号 |
US20000662079 |
申请日期 |
2000.09.14 |
申请人 |
MOTOROLA, INC. |
发明人 |
POZDER SCOTT K.;DOWNEY HAROLD A.;KOBAYASHI THOMAS S. |
分类号 |
H01L21/56;H01L23/50;H01L23/58;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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