| 发明名称 |
Three-dimensional memory array and method of fabrication |
| 摘要 |
A multi-level memory array is described employing rail-stacks. The rail-stacks include a conductor and semiconductor layers. The rail-stacks are generally the diode is located in one rail-stack and the other half in the other rail-stack.
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| 申请公布号 |
US6420215(B1) |
申请公布日期 |
2002.07.16 |
| 申请号 |
US20010814727 |
申请日期 |
2001.03.21 |
| 申请人 |
MATRIX SEMICONDUCTOR, INC. |
发明人 |
KNALL N. JOHAN;JOHNSON MARK |
| 分类号 |
G11C16/04;H01L21/77;H01L21/8246;H01L21/84;H01L27/06;H01L27/102;H01L27/115;(IPC1-7):H01L21/82;H01L21/44 |
主分类号 |
G11C16/04 |
| 代理机构 |
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