| 摘要 |
PURPOSE: A method for forming a titanium silicide gate of a semiconductor device is provided to prevent a void and a crack due to a tension stress by buffering the tension stress due to transition of a titanium silicide. CONSTITUTION: A gate electrode pattern is formed on a gate oxide layer formed on a semiconductor substrate by using a polysilicon layer(102). An interlayer dielectric is formed on a whole surface of the above structure. A contact for exposing the polysilicon layer(102) is formed by removing selectively the interlayer dielectric. A titanium silicide is buried into the inside of the contact. A titanium nitride layer(104) is deposited between a polysilicon layer(102) and a titanium silicide layer(106) in order to buffer a stress and prevent a diffusion. A titanium silicide gate(108) is fabricated on the titanium silicide layer(106).
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