LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR WITH IMPROVED SAFE OPERATING AREA

摘要

PURPOSE: A lateral double diffused metal oxide semiconductor(LDMOS) with an improved safe operating area is provided to increase a critical voltage value by remarkably reducing generation of secondary electrons and decreasing the gain of a parasitic PNP bipolar device. CONSTITUTION: A source diffusion part is prepared. A gate is capacitively coupled to control majority carriers that flow from the source diffusion part to a semiconductor drift region through a body diffusion part. An ohmic connection structure is partially self-aligned to the body diffusion part and is so disposed to collect minority carriers flowing from the drift region. The ohmic connection structure is connected to divert the flow of the minority carriers so that a forward bias of the body diffusion part is reduced.