| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of evaluating the quality of a silicon wafer that is suitable for manufacturing a highly integrated circuit of high integration with high yield. SOLUTION: In the method of evaluating the quality of a silicon wafer, a wafer having a predetermined thickness if cut off from a silicon single crystal pulled up by a CZ method, and then is subjected to lapping, etching, mirror polishing, and ammonia-based cleaning. Then, the size and number of etch pits produced on the surface of the wafer are measured and the ratio of (total number of pits 0.13μm or more)/(total number of pits of 0.11μm or more) or (total number of pits of 0.13μm or more)/(total number of pits of 0.10μm or more) is calculated to evaluate the quality of a crystalline defect in the silicon wafer and electric characteristics.
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