| 摘要 |
PROBLEM TO BE SOLVED: To solve problems in a conventional common collector high frequency oscillation circuit that it deteriorates a C/N characteristic of the oscillation circuit and increases the mount area due to a parasitic capacitance between a lower face of a capacitor and an IC substrate because an MIM(Metal- Insulator-Metal) capacitor is adopted for feedback capacitors between emitters and bases of an oscillation transistor(TR). SOLUTION: Base electrodes 32, 34, 36, 38 and emitter electrodes 33, 35, 37 of the oscillation TR are placed interdigitally to form the feedback capacitors with capacitors formed between the bases and emitter electrodes.
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