| 摘要 |
PURPOSE: A fabrication method of an image sensor is provided to effectively restrain a leakage current and to improve an optical transmittance by using a nitride layer as a prevention layer. CONSTITUTION: A metal wire(32) is formed on a semiconductor substrate(30). An IMP(Inter Metal Oxide)(33) and an SOG(Spin On Glass) are sequentially coated on the resultant structure. The SOG(34) is etched-back to expose the IMO(33). After forming an oxide layer(35) on the resultant structure, a nitride layer(36) containing hydrogen ions as a prevention layer is formed on the oxide layer. The hydrogen ions are diffused into the substrate(30) by annealing. A color filter array(37) is formed on the nitride layer(36).
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