| 摘要 |
PURPOSE: An image sensor is provided to improve a color reproduction by forming a double filter. CONSTITUTION: An image sensor comprises a semiconductor substrate(30) having a defined lower structure, a passivation layer(31) enclosing the semiconductor substrate(30), at least two stacked filter patterns(32) made of a number of alternately deposited nitrides(N) and oxides(O) formed on the passivation layer(31), an OCL planarized layer(33) completely enclosing the passivation layer(31) and the stacked filter patterns(32), a red and a blue color filters(R,B) formed on the OCL planarized layer(33) and overlapped with the stacked filter patterns(32), and a green color filter(G) formed on the OCL planarized layer(33) between the red and blue color filters(R,B). At this point, a double filter-type image sensor having the stacked filter patterns(32) and the red, blue and green color filters(R,B,G) improves a color reproduction characteristic.
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