MANUFACTURING METHOD OF TRANSISTOR FOR TEST PATTERN

摘要

PURPOSE: A method for manufacturing transistors for a test pattern is provided to simplify manufacturing processes and to reduce resistance between a channel and a contact by forming a polysilicon layer under pads. CONSTITUTION: A gate oxide(45) and a gate electrode(47) having a hard mask(49) are sequentially formed on a semiconductor substrate(41). An LDD(Lightly Doped Drain) region(51) is formed in the semiconductor substrate. An insulating spacer(53) is formed at both sidewalls of the gate electrode(47). A conductive layer(55) is formed at a predetermined region as a body pad, a source pad and a drain pad. The conductive layer are etched-back by using the hard mask(49) as an etch stopper. An interlayer dielectric having contact holes for the pads is formed on the resultant structure.