| 摘要 |
PURPOSE: A semiconductor memory device and a method for controlling a memory cell block activation thereof are provided, which enable a high speed operation by reducing an activation delay time of a memory cell block. CONSTITUTION: The semiconductor memory device includes a number of memory cell blocks(C0-Cn) and a number of row decoder blocks(B0-Bn) corresponding to each memory cell block. A block activation signal generation part(1) generates block activation signals(AC0-ACn) corresponding to each memory cell block by judging the activation of each block according to an inputted address signal(Add). The device also includes block activation control parts(A0-An), and these block activation control parts receive a RAS bar signal(/RAS) and block activation signals of corresponding block and then outputs row decoder control signals(XE0-XEn) controlling the enable of the row decoder blocks of each block.
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