发明名称 CHEMICAL MECHANICAL POLISHING TREATMENT SYSTEM AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a CMP treatment system which can prevent dehydration, solidification of residual slurry and dehydration of an abrasive cloth and a cleaning apparatus, and can reduce consumption of purified water by putting the inside of the housing into a wet condition, and to provide a manufacturing method of a semiconductor device using the same. SOLUTION: The humidity inside the housing comprising a CMP (CMP apparatus) 2 and a cleaner (cleaning apparatus) 3 is controlled to a wet condition, such as 70%-100%. By putting the inside of the housing into a wet condition, this CMP treatment system can prevent dehydration, solidification of residual slurry and drying out of the abrasive cloth and the cleaning apparatus, improve cleanness, and reduce consumption of purified water due to the reduction or the elimination of a dummy dispense.
申请公布号 JP2002198340(A) 申请公布日期 2002.07.12
申请号 JP20000391785 申请日期 2000.12.25
申请人 TOSHIBA CORP 发明人 MATSUI YUKITERU;MINAMI FUKUGAKU;YANO HIROYUKI;OKUMURA KATSUYA
分类号 H01L21/3205;H01L21/304;(IPC1-7):H01L21/304;H01L21/320 主分类号 H01L21/3205
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