| 摘要 |
PURPOSE: An organic anti-reflective compound, its preparation method, an anti-reflective layer composition, a method for preparing the anti-reflective layer, and a semiconductor device using the composition are provided, to prevent the reflection of an under layer in the super micro pattern formation process using the photoresist for lithography using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers and to remove the standing wave due to the change of thickness of photoresist. CONSTITUTION: The organic anti-reflective compound is represented by the formula 2, wherein Ra, Rb and Rc are H or methyl group; R1 to R9 are H, OH, methoxycarbonyl group, carboxyl group, hydroxymethyl group, a substituted or unsubstituted straight or branched alkyl group of C1-C5, or an alkoxyalkyl group; w, x and y are 0.01-0.99; and n is an integer of 1-3. The compound of the formula 2 is prepared by polymerizing a 9-anthralaldehydeoxime acrylate-based monomer, a hydroxyalkyl acrylate-based monomer and methyl methacrylate in a solvent with an initiator. The solvent is selected from the group consisting of THF, toluene, benzene, methylethyl ketone and dioxane. The composition comprises the compound of the formula 2; and optionally the compound represented by the formula 3, wherein R10 and R11 are a substituted straight or branched alkoxy group of C1-C10; and R12 is H or methyl group.
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