METHOD FOR FORMING BIT LINE CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A bit line contact formation method of semiconductor devices is provided to prevent a stop of an etching during a contact formation process by using two-step etching processes. CONSTITUTION: A bit line is formed by sequentially depositing a conductive layer(120) and a hard mask(130) on a semiconductor substrate(110). A spacer(140) is formed at both sidewalls of the bit line. A first interlayer dielectric(150), an etch stopper(160) and a second interlayer dielectric(170) are sequentially formed on the resultant structure. A contact hole(190) is then formed by using two-step contact etching processes. That is, a first contact etching is performed to expose the etch stopper(160) by using a photoresist layer(180) as a mask. A second contact etching is carried out to expose the conductive layer(120) by using the photoresist layer as a mask.