METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to stabilize a capacitor mask process by forming a photo-resist layer pattern on a wafer edge portion and performing the capacitor mask process. CONSTITUTION: An interlayer dielectric(10) is formed on a semiconductor substrate(1). A contact hole is formed on the semiconductor substrate(1). A contact plug(16) is formed by using a polysilicon or a selective-W. A core oxide layer(20) is formed on a whole surface of the above structure. The first photo-resist layer(34) is formed on the core oxide layer(20). The first photo-resist layer(34) is exposed selectively by using an anti-capacitor mask. The first photo-resist layer pattern(34) is formed by developing the first photo-resist layer(34). The second photo-resist layer(38) is applied on the whole surface. A charge storage electrode hole is formed by etching the exposed core oxide layer(20).