| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor structure capable of enduring an annealing at a high temperature without damaging conductivity and perfection. SOLUTION: The semiconductor structure includes a substrate selected among substrates of a group of silicon, polysilicon, silicon dioxide, and silicon germanium, and an electrode located on the substrate. The electrode contains a layer of a composition of Ir-M-O. Where, M is a metal selected from among metals of a group of Ta, Ti, Nb, Al, Hf, Zr, and V. The semiconductor structure is constructed and arranged so as to endure the annealing at a temperature of 600 deg.C or more without damaging conductivity and perfection. |
