发明名称 SEMICONDUCTOR DEVICE AND ITS FABRICATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device which has a bonding pad and multiple layer wiring overlapping with the active region of the semiconductor device, and by the method, simplification of the manufacturing process and reduction of the size of the equipment are achieved at the same time, and freedom of arrangement position of bonding pad and connection between semiconductor devices can be improved. SOLUTION: A secondary wiring layer 7 is formed on a wiring layer 2 connected to the active layer of a silicon substrate through an interlayer insulation film 6. A bonding pad 14 is placed on a secondary wiring layer 7 through a protection film 8 and a polyimide film 10 in order to overlap the active region of the silicon substrate 1. A plurality of wirings 7a and 7b of the secondary wiring layer 7 is provided in a region overlapping the bonding pad 14. One of wiring 7a is connected to the bonding pad 14 through openings 9 and 11 of the protection film 8 and the polyimide film 10 and the protection film 8 and polyimide film 10 are placed between another wiring 7b and the bonding pad 14.
申请公布号 JP2002198374(A) 申请公布日期 2002.07.12
申请号 JP20010200098 申请日期 2001.06.29
申请人 SHARP CORP 发明人 SHIMIZU HIRONOBU;FUJIMOTO KOJI;HORIO MASAHIRO
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L23/522;H01L23/528 主分类号 H01L23/52
代理机构 代理人
主权项
地址