| 摘要 |
PROBLEM TO BE SOLVED: To accelerate data read from an MRAM(Magnetic RAM) device formed of a magnetic substance memory cell having a magnetic tunnel junction section. SOLUTION: A memory cell MC and a dummy memory cell DMC are respectively connected with bit lines BL and /BL at data read, through which a data read current flows. A read gate RG of a selected memory cell array drives the voltage of read data buses RDB and /RDB depending on the voltage of the bit lines BL and /BL. A data read circuit 55a amplifies the voltage difference between the read data buses RDB and /RDB to provide an output of read data DOUT. Since the read data buses RDB and /RDB can be disconnected from the path of the data read current by using the read gate RG, a voltage change in the bit lines BL and /BL is caused quickly to attain a high data read speed. |
