| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus whose mechanism is relatively simple, however, can still effectively decrease an effect of a flow distribution in a width direction inside a reaction chamber, and can keep a high film-thickness distribu tion accuracy. SOLUTION: In the vapor phase growth apparatus 1, material gases G1, G2 supplied from gas-introduction inlets 21A, 21B flow over an upper surface side of the outer circumferential surface 23b of a bank component 23 against the surface 23b, then, flow along the major surface of a substrate W on a susceptor 12. When a direction orthogonally crossing both of a horizontal reference line HSL and a rotation axis line O of the susceptor 12 is defined as a width direction WL, partition plates 34R, 34L, which divide the flow of the material gases G1, G2 passing towards the substrate W at a plurality of positions in the width direction WL, are provided between the gas introduction inlets 21A, 21B and the substrate W. A plurality of partition plates 34R, 34L are divided on the left and right sides of the horizontal reference line HSL in the width direction WL and are located so as to extend to the outer circumferential surface 23b of each bank component 23, and the form of the partition plate 34R on the right side of the horizontal reference line HSL is made different from that of the partition plate 34L on the left side.
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