| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a PE-SiON thin film for ARC, by which particle generation is reduced compared to the conventional method by changing the RE power and the turn-on time of SiH4 in the PE-SiON thin film vapor deposition. SOLUTION: The method includes a step of, flowing a plurality of reaction gases consisting of SiH4, N2, NH3 and N2O in identical point of time without the bypass of SiH4 gas, and a step of carrying out a vapor deposition of a PE-SiON film material by turning on the HF-RF power in the chamber.
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