| 摘要 |
PROBLEM TO BE SOLVED: To prevent needless current consumption of a cell of which a current is made to flow after read/write of data. SOLUTION: A word line control circuit of a SRAM device is provided with an X address decoder decoding an X address and outputting an X address of a cell block, a word line driver inputting an X address, generating a word line enable-signal of a cell block, and outputting it, a cell block having word lines and bit lines, a column selector selecting any pair of bit lines out of bit lines, a sense amplifier amplifying an out put of the column selector and outputting it at the time of reading, and a write-driver to which data are inputted at the time of writing and generating a driving signal. And the circuit selects an enable-signal of the sense amplifier at the time of reading, selects an enable-signal of the write-driver at the time of writing, and generates a control signal conforming to a read/write discrimination signal, after delay of the prescribed time, the circuit outputs a control signal and disables the word line.
|
