| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has large contact area on a source/drain region regardless of fining in a transistor, and at the same time excellent element separation characteristics. SOLUTION: The sectional shape of a gate sidewall insulating film is formed in L and inverse-L shapes for covering one portion of a silicon substrate surface near the gate electrode, and a silicon single crystal layer that is selectively subjected to epitaxial growth from the source/drain region is extended on the upper surface of the gate sidewall insulating film for covering one portion of the silicon substrate surface, thus obtaining the semiconductor device that secures the contact area on the source/drain region regardless of the fining in the transistor for reducing series resistance in the transistor, and is made of a high-performance MOS transistor having an elevated source/drain structure.
|
