DRY ETCHING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device in which mesa sidewalls have excellent verticality and flatness. SOLUTION: A manufacturing method of the semiconductor device, in which a semiconductor substrate 100 is etched by using a photoresist 102 including sulfur, in the manufacturing method of the semiconductor device including a dry etching process using a chlorine gase.