| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve an operating characteristic and an operating speed by preventing junction leakage current. CONSTITUTION: A pad oxide layer is formed on a silicon substrate(81). A pad nitride layer is formed on the pad oxide layer. The silicon substrate(81) is exposed by etching the pad nitride layer and the pad oxide layer. A shallow trench is formed by using the pad nitride layer and the pad oxide layer as a mask. A surface oxide layer(86) is formed by performing a thermal oxidation process for the shallow trench(84). A shallow trench isolation layer(87) is formed by filling an insulating material into the shallow trench. A BMD(92) is grown by growing nuclei. A gate oxide layer and a gate electrode(89) are laminated on the silicon substrate(81) of one side of the shallow trench isolation layer(87). A junction depletion region(91) and an n-type dopant region(90) are formed between the gate electrode(89) and the shallow trench isolation layer(87).
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