IMAGE SENSOR FOR IMPROVING CHARACTERISTIC OF LIGHT SENSITIVITY AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: An image sensor for improving a characteristic of light sensitivity and a method for fabricating the same are provided to improve the light sensitivity by reducing an overlapped capacitance between a gate electrode and a floating diffusion region. CONSTITUTION: A field oxide layer(31) is formed on a p-type semiconductor substrate(30). A gate insulating layer(32) is formed on the p-type semiconductor substrate(30). A gate electrode(33) of a transfer transistor is formed on the gate insulating layer(32). An n-type dopant region(34) is formed by implanting n-type dopants ions into the semiconductor substrate(30) of one end portion of the gate electrode(33). An insulating layer spacer(35) is formed on a sidewall of the gate electrode(33). A p-type dopant region(37) is formed on the n-type dopant region(34). A floating diffusion region(38) is formed on the silicon substrate(30) of the other end portion of the gate electrode(33).