METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to improve electric characteristics by nitrating a surface of a lower electrode and forming a tantalum oxynitride layer thereon. CONSTITUTION: An oxide layer(110) is deposited on a silicon substrate(100). A lower electrode(120) of a cylinder structure is formed thereon by performing a contact etch process and depositing a polysilicon layer. A nitride layer(130) is formed by performing a high thermal process on a surface of the silicon lower electrode(120). A tantalum oxynitride layer(140) is formed on an upper surface of the above structure. An amorphous tantalum oxynitride layer(140) is formed by providing O2 gas or NH3 gas as a reaction gas to an LPCVD chamber. A silicon nitride layer(150) is deposited on an upper surface of the above structure. The amorphous tantalum oxynitride layer(140) is crystallized by performing a thermal process.