METHOD FOR FORMING METAL LAYER OF SEMICONDUCTOR DEVICE USING DAMASCENE PROCESSING

摘要

PURPOSE: A metal layer formation method of semiconductor devices using a damascene processing is provided to prevent an increase of a dielectric constant and a damage of an insulating layer. CONSTITUTION: After forming an insulating layer(35) having a contact hole on a semiconductor substrate, an etch stopper(40) is formed on the insulating layer. An SOG(Spin On Glass) layer is coated on the etch stopper(40). The surface of the SOG layer is densificated or cured by irradiating electron beams or implanting dopants, thereby forming a cured SOG layer(45). The cured SOG layer(45) is then globally planarized by CMP. A trench is formed by selectively etching the cured SOG layer(45). Then, a metal layer is filled into the trench.