发明名称 SUBSTRATE SURFACE TREATMENT APPARATUS AND SUBSTRATE SURFACE TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To provide a substrate surface treatment apparatus and a substrate surface treatment method which can process a substrate surface treatment evenly on the substrate surface. SOLUTION: A wafer W being rotated on a hot plate and heated at a predetermined temperature is exposed to a hydrofluoric acid vapor supplied from a slender slit 93a formed on a rectifier plate 93 above the wafer W to remove an oxide on the wafer surface. The slit 93a is arranged so as to cross the rotation axis of the wafer W and it is longer than the diameter of the wafer W.
申请公布号 JP2002198349(A) 申请公布日期 2002.07.12
申请号 JP20000397412 申请日期 2000.12.27
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 HARA TAKASHI;OKUMURA TAKESHI
分类号 G03F7/38;H01L21/027;H01L21/302;H01L21/304;H01L21/306;H01L21/3065;(IPC1-7):H01L21/306 主分类号 G03F7/38
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