发明名称 |
SUBSTRATE SURFACE TREATMENT APPARATUS AND SUBSTRATE SURFACE TREATMENT METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a substrate surface treatment apparatus and a substrate surface treatment method which can process a substrate surface treatment evenly on the substrate surface. SOLUTION: A wafer W being rotated on a hot plate and heated at a predetermined temperature is exposed to a hydrofluoric acid vapor supplied from a slender slit 93a formed on a rectifier plate 93 above the wafer W to remove an oxide on the wafer surface. The slit 93a is arranged so as to cross the rotation axis of the wafer W and it is longer than the diameter of the wafer W. |
申请公布号 |
JP2002198349(A) |
申请公布日期 |
2002.07.12 |
申请号 |
JP20000397412 |
申请日期 |
2000.12.27 |
申请人 |
DAINIPPON SCREEN MFG CO LTD |
发明人 |
HARA TAKASHI;OKUMURA TAKESHI |
分类号 |
G03F7/38;H01L21/027;H01L21/302;H01L21/304;H01L21/306;H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
G03F7/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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