| 摘要 |
PROBLEM TO BE SOLVED: To provide an integrated circuit device having a photodetector and a method of manufacturing the circuit device. SOLUTION: In the integrated circuit device, the photodetector is integrated with a bipolar transistor containing a high-speed vertical NPN transistor having polysilicon emitter on a single semiconductor chip. The photodetector has a nitride silicon layer which works as a reflection preventing film. The nitride silicon layer and oxide layers on both sides of the silicon layer insulate the end section of the polysilicon emitter from a transistor area under the emitter. Consequently, parasitic capacitances are minimized and, at the same time, a high-frequency response is achieved.
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