发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To realize a redundant circuit in which continuous address replacing can be performed. SOLUTION: A semiconductor memory has a redundant circuit consisting of a fuse section 1 storing a defective address and a decoding section 2 detecting coincidence of a stored defective address and an address externally given in actual operation, continuous addresses are replaced by redundant circuits of one set by storing an address stored in the redundant circuit of one set and an address to which 1 is added when all low order addresses are '1' in the fuse section 1.
申请公布号 JP2002197888(A) 申请公布日期 2002.07.12
申请号 JP20000395200 申请日期 2000.12.26
申请人 SANYO ELECTRIC CO LTD 发明人 KANEDA YOSHINOBU;NOMURA HIDEMI
分类号 G11C29/04;G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/04
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