| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus that can improve a uniformity of a thin film by etching a resist film uniformly or improve a uniformity of the other plasma treatments, when the thin film being a treated object is etched by using a predetermined pattern through the resist film or the other plasma treatment are applied. SOLUTION: The plasma treatment apparatus 10 of this invention comprises an upper and a lower electrodes 12, 13 arranged within a treatment room 11, a second high-frequency power supply 15 applying a high-frequency power to the upper electrode 13, and a quartziferous shield ring 21 covering the peripheral edge of the undersurface of the upper electrode 13, and the contact area of the shield ring 21 with a plasma is covered by a plasma-resistant film 21B made of yttrium oxide. |
