CURRENT FUSING TYPE FUSE ARRAY, SEMICONDUCTOR MEMORY, AND SEMICONDUCTOR MEMORY SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a current fusing type fuse array with which rise of a cost due to increase in manufacturing processes and increase in pattern occupied area can be suppressed even of a semiconductor device provided with neither ROM nor fuse element. SOLUTION: Information storing elements constituted of metal fuses F11-Fyx and diodes D11-Dyx are arranged in an array state, and a current fusing type fuse array storing data in accordance with fusing/non-fusing is formed by causing current to flow selectively in the metal fuse. The current fusing type metal fuse can be formed utilizing constitution such as one part of metal wiring, or the like which exists in a semiconductor device originally, since pads and wiring required in current-fusing of a metal fuse can be shared by arraying metal fuses in an array state, storing data of multi-bits can be performed with less pads and smaller pattern occupied area.